extraordinary magnetoresistance

Electrical resistance can increase with increased magnetic field strength {extraordinary magnetoresistance} (EMR). Non-magnetic indium antimonide is a narrow gap semiconductor with high carrier mobility. Indium antimonide and gold lattice at room temperature has high EMR and so can be a magnetic-field sensor. Magnetic fields can change manganese oxide {manganite} from non-magnetic to ferromagnetic and metallic {colossal magnetoresistance} (CMR). Ferromagnetic layers with non-magnetic material between them {giant magnetoresistance} (GMR) are in disk-drive read heads.

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